4K Sensor Camera IMX214 IMX315 IMX258

4K Sensor Camera IMX214 IMX315 IMX258 adoptat Exmor - RSTM technologiam consequi alta celeritate imaginem capientis per columnam parallelam A/D circuitus converter et altum sensibilitatem et submissam sonitum imaginem (comparans cum conventional CMOS imaginem sensorem ) per posteriora pixel structura illuminata imaginatio. R, G, B, pigmentum pri- color colum musivo inscriptum est.

Patefacioas varias technologias inducendo spacialiter, altae dynamicae magnitudinis adhuc imagines et cinematographicae res deducerentur. 4K Sensor Camera IMX214 IMX315 IMX258 aptat Lorem electronicum cum temporis integratione variabili. Cum tribus potentiae copia voltages operatur: analog 2.7V. digital 1.0 V et 1.8 V pro input/output interface et humilis potentia consummatio consequitur. IMX214 ad usum in phones cellularibus vel in tabulis machinis destinatur.

nativus 4K Sensor Camera IMX214 IMX315 IMX258 functiones et Features

Back - illuminata et reclinata CMOS imaginis sensoris "Exmor - RSTMM"

◆ Single Frame High Dynamic Range (HDR) with equivalent full pixels.

◆ Maximum signum est rationi sonitus (SNR).

Plena resolutio @30fps(Nornmal/HDR).4K2K@30fps(Nomal / HDR)1080p@60fps(Normal/HDR)

◆ Output video format of RAW10/8, RAW14/12(HDR).

Pixel binning readout et H / V sub - sampling functionem

◆ Analog tondentes , digitales tondentes ac scalis functiones .

Independentes flipping et speculum.

CSI -2 Vide data output (MIPI -2Lane/-4Lane selectable )

◆2- Vide filum communicationis.

Duae PLLs pro independens horologii generationis pro pixel control et data output interface.

Provectus Noise Reduction.

Dynamic defectus Pixel Correctio (1Demental/2Demental)

◆ Nulla Lorem lag .

Power - on reset function

Dual operatio sensoris synchronisation.

◆8K frenum OTP ROM pro users.

Built - in temperatus sensorem

Hot Sale 4K Sensor Camera IMX214 IMX315 IMX258 Fabrica Structure

CMOS imaginem sensorem

◆Image amplitudo: Diametrum 5.892mm (Typus 1/3.06)

◆ Totus numerus imaginum: 4224(H) x 3200(V) approx. 13.51M elementa

◆ Numerus imaginum efficaciorum: 4224(H) x 3136(V) approx. 13.25M elementa

◆ Numeri elementa activa: 4208(H) x 3120(V) approx. 13.13M elementa

◆ Chip size: 6.100mm(H) x 4.524mm(V)

◆Unit cellula amplitudo: 1.12μm(H) x 1.12μm(V)

Substrate materia: Silicon